Multi-Scale Simulation Study of the Strained Si Nanowire FETs

被引：0

作者：

Lee, Jaehyun ^{[1
]}

Medina-Bailon, Cristina ^{[1
]}

Berrada, Salim ^{[1
]}

Carrillo-Nunez, Hamilton ^{[1
]}

Sadi, Toufik ^{[2
]}

Georgiev, Vihar P. ^{[1
]}

Nedjalkov, Mihail ^{[3
]}

Selberherr, Siegfried ^{[3
]}

Asenov, Asen ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow, Lanark, Scotland

[2] Aalto Univ, Dept Neurosci & Biomed Engn, Aalto, Finland

[3] TU Vienna, Inst Microelect, Vienna, Austria

来源：

2018 IEEE 13TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC) | 2018年

基金：

英国工程与自然科学研究理事会;

关键词：

DFT; Nanowire; Strain; Mobility; TRANSPORT; MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study 2.1nm-diameter uniaxial strained Si gate-all-around nanowire field-effect transistors, focusing on the electron mobility and the variability due to random discrete dopants (RDDs). Firstly, we extract the electron effective masses under various strains from Density Functional Theory (DFT) simulations. Secondly, we present the impact of the strain on the electron mobility in the Si nanowire using the Kubo-Greenwood formalism with a set of multi-subband phonon, surface roughness, and ionized impurity scattering mechanisms. Finally, we perform quantum transport simulations to investigate the effect of RDD on the threshold voltage and ON-state current variation.

引用

页码：281 / 284

页数：4

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