Effect of post-annealing treatment on the microstructure and optical properties of ZnO/PS nanocomposite films

被引:25
作者
Ma, S. Y. [1 ]
Yang, X. H. [1 ]
Huang, X. L. [1 ]
Sun, A. M. [1 ]
Song, H. S. [1 ]
Zhu, H. B. [1 ]
机构
[1] Northwest Normal Univ, Coll Phys & Elect Engn, Key Lab Atom & Mol Phys & Funct Mat Gansu Prov, Lanzhou 730070, Gansu, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO thin film; Porous silicon; RF magnetron sputtering; X-ray diffraction; Optical properties; THIN-FILMS; SIZE DEPENDENCE; GAS SENSOR; PHOTOLUMINESCENCE; SUBSTRATE; EMISSION; SILICON; LUMINESCENCE; ULTRAVIOLET; DEPOSITION;
D O I
10.1016/j.jallcom.2013.02.179
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, porous silicon (PS) templates were formed by electrochemical anodization on p-type (100) silicon wafer and ZnO films were deposited on PS substrates using radio frequency reactive magnetron sputtering technique. The effects of annealing temperature on the microstructure and optical properties of the ZnO/PS nanocomposite films were systematic ally investigated by X-ray diffraction (XRD), UV-Visible spectroscopy and fluorescence spectrophotometry. XRD results indicated that all ZnO films were polycrystalline in nature with a hexagonal wurtzite structure and the (0002) oriented ZnO films deposited on PS substrates had the best crystal quality under annealing at 700 degrees C. It was demonstrated that the optical band edge shifted to longer wavelength as the annealing temperature shifted from room temperature (RT) to 700 degrees C due to the quantum confinement effect. Furthermore, the optical band gaps calculated based on the quantum confinement model were in good agreement with the experimental values. Photoluminescence (PL) measurements at RT revealed that ZnO/PS films formed abroad PL band including the violet, blue and green emissions from ZnO and red-orange emission from the PS. The mechanism and interpretation of broadband PL of the films were discussed in detail. Crown Copyright (C) 2013 Published by Elsevier B. V. All rights reserved.
引用
收藏
页码:9 / 15
页数:7
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