Block-by-block growth of single-crystalline Si/SiGe superlattice nanowires

被引：913

作者：

Wu, YY ^{[1
]}

Fan, R ^{[1
]}

Yang, PD ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Dept Chem, Div Sci Mat, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2002年 / 2卷 / 02期

关键词：

D O I：

10.1021/nl0156888

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Heterojunction and superlattice formation is essential for many potential applications of semiconductor nanowires in nanoscale optoelectronics. We have developed a hybrid pulsed laser ablation/chemical capor deposition (PLA-CVD) process for the synthesis of semiconductor nanowires with longitudinal ordered heterostructures. The laser ablation process generates a programmable pulsed vapor source, which enables the nanowire growth in a block-by-block fashion with a well-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice structure have been successfully synthesized. This unique class of heterostructured one-dimensional nanostructures holds great potential in applications such as light emitting devices and thermoelectrics.

引用

页码：83 / 86

页数：4

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