A silicon-based widely tunable short-wave infrared optical parametric oscillator

被引：40

作者：

Kuyken, Bart ^{[1
,2
]}

Liu, Xiaoping ^{[3
]}

Osgood, Richard M., Jr. ^{[3
]}

Baets, Roel ^{[1
,2
]}

Roelkens, Guenther ^{[1
,2
]}

Green, William M. J. ^{[4
]}

机构：

[1] Ghent Univ Imec, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[4] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 05期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

GAIN; WIRE; AMPLIFICATION; GENERATION;

D O I：

10.1364/OE.21.005931

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a synchronously pumped optical parametric oscillator (OPO) based on parametric gain in a silicon-on-insulator photonic wire. We exploit the highly nonlinear broadband response of the photonic wire to achieve broadband single-pass amplification up to 54 dB. This allows us to construct an OPO that is tunable across a 75 nm-wide band near 2075 nm, when pumped by a picosecond pulse train at 2175 nm. Additionally we demonstrate broadband tuning across 150 nm by varying the pump wavelength and exploiting the higher order dispersion characteristics of the silicon photonic wire. (c) 2013 Optical Society of America

引用

页码：5931 / 5940

页数：10

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