Bipolar magnetic semiconductors and half-metals in transition metals doped SnSe2 zigzag nanoribbons

被引:5
作者
Zhai, Ming-Xing [1 ]
Liang, Xiaoqing [1 ]
Li, Dong-Xuan [1 ]
机构
[1] Taizhou Univ, Dept Phys, Taizhou 318000, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
SnSe2 zigzag nanoribbons; Transition metal dopants; Bipolar magnetic semiconductor; Half-metal; Density functional theory; SPINTRONICS; STABILITY; 1ST-PRINCIPLES; MONOLAYER; GRAPHENE; GROWTH; DESIGN;
D O I
10.1016/j.rinp.2022.105733
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic and electronic properties of transition metals (TM) (TM = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni) doped SnSe2 zigzag nanoribbons (ZNRs) are investigated by employing density functional theory. When an Sn atom on edge of ZNR is substituted by Sc atom, the ZNR behaves as bipolar magnetic semiconductors with 100% spin polarization of valence band and conduction band carriers, where the spin-polarization direction can easily be switched by an external electric field. The Cr-doped ZNR is a spin-gapless semiconductor in which the valence band and conduction band in the spin-up channel touch each other at Fermi energy. The others either are usual magnetic semiconductors or nonmagnetic semiconductors. When two Sn atoms on the edge are substituted by Cr atoms, it is observed that the SnSe2 nanoribbon exhibits half-metallic behavior. Either one Cr dopant or two Cr dopants on edge, the nanoribbons have stable 100% spin polarization of conduction carriers at a wide energy range. These findings demonstrate that the Sc-, Cr-, and 2Cr-doped SnSe2 zigzag nanoribbons are excellent candidates for spintronics.
引用
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页数:9
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共 54 条
  • [1] Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study
    Ali, Anwar
    Zhang, Jian-Min
    Muhammad, Iltaf
    Shahid, Ismail
    Ahmad, Iqtidar
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2020, 145
  • [2] Controlled synthesis of few-layer SnSe2 by chemical vapor deposition
    An, Boxing
    Ma, Yang
    Zhang, Guoqing
    You, Congya
    Zhang, Yongzhe
    [J]. RSC ADVANCES, 2020, 10 (69) : 42157 - 42163
  • [3] Study on the carrier transport mechanism in single-crystalline Br-doped SnSe2
    Bang, Geukchan
    Ryu, Jung Hyun
    Lee, Kimoon
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2020, 146
  • [4] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [5] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
    CEPERLEY, DM
    ALDER, BJ
    [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
  • [6] Graphene Nanoribbons: On-Surface Synthesis and Integration into Electronic Devices
    Chen, Zongping
    Narita, Akimitsu
    Muellen, Klaus
    [J]. ADVANCED MATERIALS, 2020, 32 (45)
  • [7] NEW CLASS OF MATERIALS - HALF-METALLIC FERROMAGNETS
    DEGROOT, RA
    MUELLER, FM
    VANENGEN, PG
    BUSCHOW, KHJ
    [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (25) : 2024 - 2027
  • [8] Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
    Dudarev, SL
    Botton, GA
    Savrasov, SY
    Humphreys, CJ
    Sutton, AP
    [J]. PHYSICAL REVIEW B, 1998, 57 (03) : 1505 - 1509
  • [9] Layer-dependent properties of SnS2 and SnSe2 two-dimensional materials
    Gonzalez, Joseph M.
    Oleynik, Ivan I.
    [J]. PHYSICAL REVIEW B, 2016, 94 (12)
  • [10] The Jahn-Teller effect: a retrospective view
    Ham, FS
    [J]. JOURNAL OF LUMINESCENCE, 2000, 85 (04) : 193 - 197