Fine-Grained Built-In Self-Repair Techniques for NAND Flash Memories

被引:1
作者
Lu, Shyue-Kung [1 ]
Tseng, Shi-Chun
Miyase, Kohei
机构
[1] Natl Taiwan Univ Sci & Technol, Taipei 10607, Taiwan
来源
2022 IEEE INTERNATIONAL TEST CONFERENCE (ITC) | 2022年
关键词
RELIABILITY; RECOVERY; REFRESH; SCHEME; LDPC;
D O I
10.1109/ITC50671.2022.00047
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Built-in self-repair (BISR) techniques has been considered as the most cost-effective solution for enhancing yield and reliability of NAND flash memory. Owing to the inherent architecture of NAND flash memory, conventional BISR techniques use spare columns and NAND blocks as the basic replacement elements. These techniques can be categorized as the coarse-grained BISR techniques (CGBISR). It is evident that the efficiency of spare usage is very low. To cure this dilemma, fine-grained BISR (FGBISR) techniques are proposed in this paper. We first exploit the fault behaviors at the circuit level and derive novel and concise repairable fault types (RFTs) for the widely used flash memory fault models. The proposed RFTs include bit-, page-, column-, and NAND block-repairable faults. Therefore, FGBISR can conduct repairing at the finegrained levels for improving repair efficiency. We also provide efficient redundancy analysis algorithms suitable for VLSI implementation based on the RFTs. The corresponding FGBISR architectures and repair flow are also proposed. A simulator was developed for evaluating repair rate, yield, reliability, and hardware overhead. Experimental results show that repair rate, yield, and reliability can be raised significantly with negligible hardware overhead.
引用
收藏
页码:391 / 399
页数:9
相关论文
共 30 条
  • [1] Basak A, 2013, MIDWEST SYMP CIRCUIT, P1085, DOI 10.1109/MWSCAS.2013.6674841
  • [2] Error Characterization, Mitigation, and Recovery in Flash-Memory-Based Solid-State Drives
    Cai, Yu
    Ghose, Saugata
    Haratsch, Erich F.
    Luo, Yixin
    Mutlu, Onur
    [J]. PROCEEDINGS OF THE IEEE, 2017, 105 (09) : 1666 - 1704
  • [3] Cai Y, 2012, PR IEEE COMP DESIGN, P94, DOI 10.1109/ICCD.2012.6378623
  • [4] An Adaptive-Rate Error Correction Scheme for NAND Flash Memory
    Chen, Te-Hsuan
    Hsiao, Yu-Ying
    Hsing, Yu-Tsao
    Wu, Cheng-Wen
    [J]. 2009 27TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2009, : 53 - 58
  • [5] RAMSES-FT: A fault simulator for flash memory testing and diagnostics
    Cheng, KL
    Yeh, JC
    Wang, CW
    [J]. 20TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2002, : 281 - 286
  • [6] Dekker R., 1988, International Test Conference 1988 Proceedings - New Frontiers in Testing (Cat. No.88CH2610-4), P343, DOI 10.1109/TEST.1988.207820
  • [7] Minimizing Retention Induced Refresh Through Exploiting Process Variation of Flash Memory
    Di, Yejia
    Shi, Liang
    Gao, Congming
    Li, Qiao
    Xue, Chun Jason
    Wu, Kaijie
    [J]. IEEE TRANSACTIONS ON COMPUTERS, 2019, 68 (01) : 83 - 98
  • [8] ON DECODING BCH CODES
    FORNEY, GD
    [J]. IEEE TRANSACTIONS ON INFORMATION THEORY, 1965, 11 (04) : 549 - 557
  • [9] Ginez O, 2008, 2008 IEEE 14TH INTERNATIONAL MIXED-SIGNALS, SENSORS, AND SYSTEMS TEST WORKSHOP, P176
  • [10] Guo J, 2014, ASIA S PACIF DES AUT, P592, DOI 10.1109/ASPDAC.2014.6742955