Wide-band matched LNA design using transistor's intrinsic gate-drain capacitor

被引：27
作者：
Hu, R [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2006年 / 54卷 / 03期
基金：
美国国家航空航天局;
关键词：
input matching; low-noise amplifier (LNA); noise parameters; noise temperature; wide-band;
D O I：
10.1109/TMTT.2006.869703
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the development of a wide-band amplifier with matched input impedance and low noise temperature over 10-20 GHz. Here, the novel wide-band feedback mechanism provided by the transistor's intrinsic gate-drain capacitor will be analyzed in detail with both the derived input reflection coefficient and noise temperature of the resulting circuit confirmed by their simulated counterparts. It is thus clear why by fine tuning its output RC loading impedance and source inductance, a transistor's input reflection coefficient and noise temperature can be greatly improved over broad bandwidth. To demonstrate the feasibility of this novel approach, a wide-band low-noise amplifier (LNA) is designed and characterized. A bandwidth broadening mechanism using double feedback is also proposed for the future design of matched ultra-wide-band LNA.
引用
收藏
页码：1277 / 1286
页数：10
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