Light emission of a CdS(Cu)/CdS thin-film diode

被引：0

作者：

Abe, T ^{[1
]}

Sato, J ^{[1
]}

Ohashi, S ^{[1
]}

Watanabe, M ^{[1
]}

Kashiwaba, Y ^{[1
]}

机构：

[1] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2002年 / 229卷 / 02期

关键词：

D O I：

10.1002/1521-3951(200201)229:2<1015::AID-PSSB1015>3.3.CO;2-V

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin-film diodes composed of Cu-doped p-type US (CdS(Cu)) and non-doped n-type US films (CdS(Cu)/CdS diode) were fabricated by an all-vacuum deposition process. The diodes showed good rectification characteristics and light emission of blue-green, Green and red colors under a forward current at 77 K. The colors of light were changed by the Cu concentration, thickness of the Cu-diffused US layer and current density. It is thought that light emission of the diode was Generated by a p-CdS(Cu)/n-CdS homojunction.

引用

页码：1015 / 1018

页数：4

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