Silicon carbide: A new positron moderator

被引:45
作者
Stormer, J
Goodyear, A
Anwand, W
Brauer, G
Coleman, PG
Triftshauser, W
机构
[1] UNIV E ANGLIA,SCH PHYS,NORWICH NR4 7TJ,NORFOLK,ENGLAND
[2] TECH UNIV DRESDEN,RES CTR ROSSENDORF INC,POSITRON GRP,D-01314 DRESDEN,GERMANY
关键词
RARE-GAS SOLIDS; BEAMS; SURFACES;
D O I
10.1088/0953-8984/8/7/002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Observation of copious positron re-emission from crystalline 6H-SiC, with no pretreatment and without the need for ultra-high-vacuum conditions, suggests that this material may form the basis of an important new moderator for the production of monoenergetic positrons. Its positron work function is measured to be -3.0 +/- 0.2 eV. Its electrical characteristics point to SiC as a prime candidate for development as a field-assisted positron moderator, producing moderately intense slow-positron beams in laboratory-based systems and enabling a new generation of positron experimentation.
引用
收藏
页码:L89 / L94
页数:6
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