Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

被引：26

作者：

Bodea, M. A. ^{[1
]}

Sbarcea, G. ^{[1
,2
,3
]}

Naik, G. V. ^{[4
,5
]}

Boltasseva, A. ^{[4
,5
,6
,7
]}

Klar, T. A. ^{[1
]}

Pedarnig, J. D. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Appl Phys, A-4040 Linz, Austria

[2] Univ Politehn Bucuresti, Bucharest 060042, Romania

[3] Natl Inst Res & Dev Elect Engn ICPE CA, Bucharest 030138, Romania

[4] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[5] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[6] Tech Univ Denmark, DTU Foton, DK-2800 Lyngby, Denmark

[7] Univ Erlangen Nurnberg, Erlangen Grad Sch Adv Opt Technol SAOT, D-91052 Erlangen, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 110卷 / 04期

基金：

欧洲研究理事会;

关键词：

OPTICAL-PROPERTIES; PLASMONIC MATERIALS; SUBSTRATE; GROWTH;

D O I：

10.1007/s00339-012-7198-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped ZnO shows substantially smaller losses in the near infrared.

引用

页码：929 / 934

页数：6

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