Optical, scintillation properties and defect study of Gd2Si2O7:Ce single crystal grown by floating zone method

被引:13
作者
Feng, He [1 ]
Xu, Wusheng [2 ]
Ren, Guohao
Yang, Qiuhong [1 ]
Xie, Jianjun [1 ]
Xu, Jun [3 ]
Xu, Jiayue [4 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
[2] GE Global Res, Funct Mat Lab, Shanghai 201203, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China
[4] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China
关键词
Gd2Si2O7:Ce; Single crystal; Optical properties; Thermally stimulated luminescence; Defects; CERIUM; LUMINESCENCE; CE;
D O I
10.1016/j.physb.2012.11.042
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Single crystal of Gd2Si2O7:Ce (GPS) presenting attractive scintillation performance was grown by the floating zone method. The vacuum ultra-violet (VUV) excitation and emission, ultra-violet (UV) excitation and emission spectra and fluorescent decay time at 77 K and RT were measured and discussed. Relative energy levels of 5d sublevels of Ce3+ in GPS:Ce are detected by the VUV excitation spectrum. The UV emission curve of GPS:1%Ce peaks around 382 nm at 77 K and moves towards longer wavelength direction as temperature increases. Thermally stimulated luminescence (TSL) was employed to investigate the defects in GPS:1%Ce. Energy depths of two traps detected in GPS:1%Ce are 0.64 and 1.00 eV. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:114 / 117
页数:4
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