Formation of step bunching in the epitaxial growth of SrRuO3 thin films

被引:4
作者
Sanchez, F. [1 ]
Rigato, F. [1 ]
Bachelet, R. [1 ]
Fontcuberta, J. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
关键词
step bunching; physical vapour deposition processes; perovskites; conducting oxides; magnetic materials;
D O I
10.1016/j.jcrysgro.2008.04.016
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The formation of step bunching in SrRuO3 epitaxial films has been investigated by exploring the thickness dependence of the morphology. We have observed that pronounced step meandering in the thinner films modifies locally the terrace width. With subsequent growth, areas with double steps form and coexist with other having single steps. The areas with bunching grow and eventually coalesce. We will argue that adatom kinetics is the main driving force for step bunching nucleation. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3348 / 3350
页数:3
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