Electronic structure of α- and β-brass

被引:16
作者
Dhaka, R. S. [1 ]
Banik, S. [1 ]
Shukla, A. K. [1 ]
Vyas, V. [2 ]
Chakrabarti, Aparna [3 ]
Barman, S. R. [1 ]
Ahuja, B. L. [4 ]
Sharma, B. K. [2 ]
机构
[1] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India
[2] Univ Rajasthan, Dept Phys, Jaipur 302015, Rajasthan, India
[3] Raja Ramanna Ctr Adv Technol, Indore 452013, India
[4] ML Sukhadia Univ, Dept Phys, Udaipur 313001, India
来源
PHYSICAL REVIEW B | 2008年 / 78卷 / 07期
关键词
D O I
10.1103/PhysRevB.78.073107
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The unoccupied conduction band and the occupied valence band of alpha- and beta-brass (Cu-Zn) have been studied by inverse photoemission and photoemission spectroscopy. The experimental spectra have been interpreted with the help of calculations based on full potential linearized augmented plane wave method using density functional theory. The modification of the conduction and valence bands between a- and G-brass is related to the change in structure and increase in Zn content. For CuZn, the density of states exhibits a monotonic decrease across the Fenni level (E(F)) with a dip at about 2 eV above E(F), but no evidence of a minimum representing a pseudogap is observed at E(F).
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页数:4
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