Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

被引：52

作者：

Galler, Bastian ^{[1
]}

Lugauer, Hans-Juergen ^{[1
]}

Binder, Michael ^{[1
]}

Hollweck, Richard ^{[1
]}

Folwill, Yannick ^{[1
]}

Nirschl, Anna ^{[1
]}

Gomez-Iglesias, Alvaro ^{[1
]}

Hahn, Berthold ^{[1
]}

Wagner, Joachim ^{[2
]}

Sabathil, Matthias ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

关键词：

DOPED GAN; COMPENSATION; PHOTOLUMINESCENCE;

D O I：

10.7567/APEX.6.112101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate theoretically the influence of type and density of background carriers in the active region on the quantum efficiency of InGaN-based light emitters using an extension of the ABC rate model. A method to determine experimentally whether a certain type of Auger recombination is relevant in InGaN quantum wells is derived from these considerations. Using this approach, we show that the physical process which is the dominant cause for the efficiency droop is superlinear in the electron density and can thus be assigned to nnp-Auger recombination. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 24 条

[1]

Bertazzi F., ARXIV13052512

[2] Numerical analysis of indirect Auger transitions in InGaN [J].

Bertazzi, Francesco ;

Goano, Michele ;

Bellotti, Enrico .

APPLIED PHYSICS LETTERS, 2012, 101 (01)

[3] Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence [J].

Binder, M. ;

Nirschl, A. ;

Zeisel, R. ;

Hager, T. ;

Lugauer, H. -J. ;

Sabathil, M. ;

Bougeard, D. ;

Wagner, J. ;

Galler, B. .

APPLIED PHYSICS LETTERS, 2013, 103 (07)

[4] Impulse absorption using small, hard panels of embedded cylinders with granular alignments [J].

Breindel, Alexander ;

Sun, Diankang ;

Sen, Surajit .

APPLIED PHYSICS LETTERS, 2011, 99 (06)

[5] Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? [J].

Bulashevich, K. A. ;

Karpov, S. Yu. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :2066-+

[6] Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. .

APPLIED PHYSICS LETTERS, 2010, 97 (03)

[7] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[8] Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers [J].

Eckey, L ;

von Gfug, U ;

Holst, J ;

Hoffmann, A ;

Kaschner, A ;

Siegle, H ;

Thomsen, C ;

Schineller, B ;

Heime, K ;

Heuken, M ;

Schon, O ;

Beccard, R .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) :5828-5830

[9] Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates [J].

Galler, B. ;

Drechsel, P. ;

Monnard, R. ;

Rode, P. ;

Stauss, P. ;

Froehlich, S. ;

Bergbauer, W. ;

Binder, M. ;

Sabathil, M. ;

Hahn, B. ;

Wagner, J. .

APPLIED PHYSICS LETTERS, 2012, 101 (13)

[10] Green high-power light sources using InGaN multi-quantum-well structures for full conversion [J].

Galler, B. ;

Sabathil, M. ;

Laubsch, A. ;

Meyer, T. ;

Hoeppel, L. ;

Kraeuter, G. ;

Lugauer, H. ;

Strassburg, M. ;

Peter, M. ;

Biebersdorf, A. ;

Steegmueller, U. ;

Hahn, B. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2369-2371

← 1 2 3 →