Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures

被引：0

作者：

Jones, ED ^{[1
]}

Shinohara, K ^{[1
]}

Shimomura, S ^{[1
]}

Hiyamizu, S ^{[1
]}

Krivorotov, I ^{[1
]}

Bajaj, KK ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII | 1999年 / 3625卷

关键词：

photoluminescence; magneto-excitons; interface roughness;

D O I：

10.1117/12.356910

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report magneto-exciton spectroscopy studies of(411)A and (100)-oriented GaAs/Al0.3Ga0.7As multiquantum well structures. The samples consisted of seven GaAs quantum wells with widths varying between 0.6 and 12nm, were grown on (411)A and (100)-oriented GaAs substrates. The exciton diamagnetic energy shifts and linewidths were measured between 0 and 14T at 1.4K The dependence of the exciton diamagnetic shifts with magnetic field were calculated using a variational approach and good agreement with experiment for both substrate orientations was found. Within experimental error, the conduction band masses for both the (100) and (411)A-oriented structures are nearly the same.

引用

页码：515 / 522

页数：8

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