Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures

被引：0
作者：
Jones, ED [1 ]
Shinohara, K [1 ]
Shimomura, S [1 ]
Hiyamizu, S [1 ]
Krivorotov, I [1 ]
Bajaj, KK [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII | 1999年 / 3625卷
关键词：
photoluminescence; magneto-excitons; interface roughness;
D O I：
10.1117/12.356910
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report magneto-exciton spectroscopy studies of(411)A and (100)-oriented GaAs/Al0.3Ga0.7As multiquantum well structures. The samples consisted of seven GaAs quantum wells with widths varying between 0.6 and 12nm, were grown on (411)A and (100)-oriented GaAs substrates. The exciton diamagnetic energy shifts and linewidths were measured between 0 and 14T at 1.4K The dependence of the exciton diamagnetic shifts with magnetic field were calculated using a variational approach and good agreement with experiment for both substrate orientations was found. Within experimental error, the conduction band masses for both the (100) and (411)A-oriented structures are nearly the same.
引用
收藏
页码：515 / 522
页数：8
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