Fabrication of silicon-silicide-on-insulator substrates using wafer bonding and layer-cutting techniques

A novel single-crystalline Si /poly-CoSi2 /SiO2 /Sub-Si structure has been successfully formed by silicon wafer bonding and hydrogen implantation induced layer cutting techniques. The hydrogen implanted silicon wafer were deposited by a thin Co and Si films subsequently and was brought into contact with an oxidized silicon wafer at room temperature. During the subsequent annealing, the hydrogen-implanted wafer was split along the projected range, leaving a thin Si film and the above deposited films on the oxidized wafer to form a multi-layer structure. The following annealing procedure not only increases the bond strength, but also employs solid state reaction of the deposited Co to form a buried poly-crystalline CoSi2 layer with a resistivity of about 160 muOmega.cm.