Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

被引：39

作者：

Li, Hongjian ^{[1
]}

Li, Panpan ^{[1
]}

Kang, Junjie ^{[1
]}

Li, Zhi ^{[1
]}

Li, Zhicong ^{[1
]}

Li, Jing ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Wang, Guohong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 10期

关键词：

D O I：

10.7567/APEX.6.102103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated phosphor-free color-tunable monolithic GaN-based light-emitting diodes (LEDs) by inserting an ultrathin 1-nm-thick InGaN shallow quantum well (QW) between deep InGaN QWs and GaN barriers. Without using any phosphors, this monolithic LED chip can be tuned to realize wide-range multicolor emissions from red to yellow under different injection currents. In partical, when the injection current reaches an upper level above 100 mA, the LEDs will achieve white emission with a very high color rending index (CRI) of 85.6. This color-tunable characteristic is attributed to the carrier redistribution in the shallow/deep QWs and the energy band filling effect as well. (c) 2013 The Japan Society of Applied Physics

引用

页数：4

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