-197dBc/Hz FOM 4.3-GHz VCO Using an Addressable Array of Minimum-Sized NMOS Cross-Coupled Transistor Pairs in 65-nm CMOS

被引:0
作者
Jha, A. [1 ,2 ]
Ahmadi, A. [1 ,2 ]
Kshattry, S. [1 ,2 ]
Cao, T. [3 ]
Liao, K. [4 ]
Yeap, G. [4 ]
Makris, Y. [1 ,2 ]
O, K. K. [1 ,2 ]
机构
[1] Univ Texas Dallas, Texas Analog Ctr Excellence, Richardson, TX 75083 USA
[2] Univ Texas Dallas, Dept Elec Engn, Richardson, TX 75083 USA
[3] Cornell Univ, Ithaca, NY USA
[4] Qualcomm Technol, San Diego, CA USA
来源
2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS) | 2016年
关键词
CMOS; VCO; phase noise; array; cross-coupled transistor pair and process variations;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 4.3-GHz voltage controlled oscillator (VCO) using an addressable array of cross-coupled minimum size NMOS transistor pairs for post fabrication selection is demonstrated in 65-nm CMOS. An algorithm based on Hamming distance using the phase noise measurements of similar to 1,500 array combinations was used to identify combinations that have record phase noise of -130dBc/Hz at 1-MHz offset from a 4.3-GHz carrier, while consuming 5.2 mW from a 1-V supply. The operating frequency of circuits using post fabrication selection in its high frequency path is increased to 5 GHz.
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页数:2
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