A dislocation density based constitutive model for crystal plasticity FEM including geometrically necessary dislocations

被引:358
作者
Ma, A. [1 ]
Roters, F. [1 ]
Raabe, D. [1 ]
机构
[1] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
关键词
statistically stored dislocation density; geometrically necessary dislocation density; internal variables; constitutive equation; Fcc;
D O I
10.1016/j.actamat.2006.01.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A dislocation density based constitutive model for face-centred cubic crystals is introduced and implemented into a crystal plasticity finite element framework. The approach assumes a homogeneous dislocation structure and tracks the dislocation evolution on each slip system. In addition to the statistically stored dislocations, the geometrically necessary dislocation density is introduced in order to consider strain gradients and thus render the model size sensitive. Furthermore, we develop a consistent algorithm for the updating of the geometrically necessary dislocation density. A simple shear experiment of an aluminium single crystal is used to calibrate the material parameters of the model and demonstrate its size sensitivity. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:2169 / 2179
页数:11
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