Novel high-performance piezoresistive shock accelerometer for ultra-high-g measurement utilizing self-support sensing beams

被引:16
作者
Jia, Chen [1 ,2 ]
Mao, Qi [1 ,2 ]
Luo, Guoxi [1 ,2 ]
Zhao, Libo [1 ,2 ]
Lu, Dejiang [1 ,2 ]
Yang, Ping [1 ,2 ]
Yu, Mingzhi [1 ,2 ]
Li, Chen [3 ]
Chang, Bo [3 ]
Jiang, Zhuangde [1 ,2 ]
机构
[1] Xi An Jiao Tong Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, State Key Lab Mfg Syst Engn, Int Joint Lab Micro Nano Mfg & Measurement Techno, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Mech Engn, Xian 710049, Peoples R China
[3] Shaanxi Univ Sci & Technol, Coll Mech & Elect Engn, Xian 710021, Peoples R China
基金
中国国家自然科学基金;
关键词
SILICON ACCELEROMETER; HIGH-SENSITIVITY; DESIGN; FABRICATION; GEOMETRY;
D O I
10.1063/5.0008451
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This study describes the design and implementation of a novel high-performance piezoresistive accelerometer for the measurement of shock acceleration of up to 100 000 g. The structure of the accelerometer sensing chip was implemented with piezoresistive self-support beams. The piezoresistors were made in piezoresistive sensing micro-beams, which were independent of support beams, to weaken the correlation between measuring sensitivity and resonant frequency. In this way, the measuring sensitivity of the proposed novel piezoresistive accelerometer could be increased without sacrificing resonant frequency. The optimization of structural dimensions of the sensing chip was conducted through finite element method simulations. The sensing chip was fabricated employing bulk-micromachining technology with a silicon-on-insulator wafer. The fabricated accelerometer was encapsulated in stainless shell and evaluated using the Hopkinson bar system. Results demonstrated the proposed accelerometer with the measuring sensitivity of 0.54 mu V/g/V and the resonant frequency of 445 kHz.
引用
收藏
页数:11
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