Growth of ZnO thin films by metalorganic chemical vapor deposition using isopropyl alcohol for oxygen precursor

被引：1
作者：
Park, Jae Young [1 ]
Hong, Yong Sung [1 ]
Kim, Sang Sub [1 ]
机构：
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
来源：
ECO-MATERIALS PROCESSING & DESIGN VII | 2006年 / 510-511卷
关键词：
ZnO thin films; MOCVD; morphology; alcohol precursor;
D O I：
10.4028/www.scientific.net/MSF.510-511.998
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO thin films were synthesized by metalorganic chemical vapor deposition on Al2O3 (0001) substrates particularly using isopropyl alcohol for oxygen precursor. Change in microstructure was investigated depending on the growth temperature and the O/Zn precursor ratio. Under an optimized condition, ZnO thin films having a very smooth surface and dense cross-sectional microstructure were obtained while possessing epitaxial crystalline alignment. However, the photoluminescent spectrum lacks the band-edge emission.
引用
收藏
页码：998 / 1001
页数：4
相关论文
共 11 条
  • [1] A two-step metal organic vapor phase epitaxy growth method for high-quality ZnO on GaN/Al2O3 (0001)
    Dadgar, A
    Oleynik, N
    Forster, D
    Deiter, S
    Witek, H
    Bläsing, J
    Bertram, F
    Krtschil, A
    Diez, A
    Christen, J
    Krost, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 267 (1-2) : 140 - 144
  • [2] Hou WC, 2004, PHYS STATUS SOLIDI C, V1, P856, DOI 10.1002/pssc.200304134
  • [3] Preparation of piezoelectric-coefficient modulated multilayer film ZnO/Al2O3 and its ultrahigh frequency resonance
    Hu, WS
    Liu, ZG
    Wu, RX
    Chen, YF
    Ji, W
    Yu, T
    Feng, D
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (04) : 548 - 550
  • [4] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101
    Hwang, DK
    Kang, SH
    Lim, JH
    Yang, EJ
    Oh, JY
    Yang, JH
    Park, SJ
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3
  • [5] Photoluminescence properties of ZnO epilayers grown on CaF2(111) by plasma assisted molecular beam epitaxy
    Ko, HJ
    Chen, YF
    Zhu, Z
    Yao, T
    Kobayashi, I
    Uchiki, H
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1905 - 1907
  • [6] Energetics of native defects in ZnO
    Oba, F
    Nishitani, SR
    Isotani, S
    Adachi, H
    Tanaka, I
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 824 - 828
  • [7] ZnO growth on Si substrates by metalorganic vapor phase epitaxy
    Ogata, K
    Kim, SW
    Fujita, S
    Fujita, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 240 (1-2) : 112 - 116
  • [8] Metalorganic chemical vapor phase deposition of ZnO with different O-precursors
    Oleynik, N
    Adam, M
    Krtschil, A
    Bläsing, J
    Dadgar, A
    Bertram, F
    Forster, D
    Diez, A
    Greiling, A
    Seip, M
    Christen, J
    Krost, A
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 14 - 19
  • [9] Metalorganic molecular beam epitaxy of ZnO using DEZn and H2O precursors
    Shirakata, S
    Saeki, K
    Terasako, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 528 - 532
  • [10] Numerical study of the ZnO growth by MOCVD
    Tena-Zaera, R
    Zúñiga-Pérez, J
    Martínez-Tomás, C
    Muñoz-Sanjosé, V
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) : 237 - 245
12