Low-Temperature, Dry Transfer-Printing of a Patterned Graphene Monolayer

被引:22
作者
Cha, Sugkyun [1 ]
Cha, Minjeong [1 ]
Lee, Seojun [1 ]
Kang, Jin Hyoun [2 ]
Kim, Changsoon [1 ,3 ]
机构
[1] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Program Nano Sci & Technol, Seoul 151742, South Korea
[2] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea
[3] Adv Inst Convergence Technol, Suwon 443270, Gyeonggi, South Korea
基金
新加坡国家研究基金会;
关键词
LOW-COST; ELECTRODES; METAL; LAYER; FILMS; BANDGAP; GROWTH; COPPER;
D O I
10.1038/srep17877
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Graphene has recently attracted much interest as a material for flexible, transparent electrodes or active layers in electronic and photonic devices. However, realization of such graphene-based devices is limited due to difficulties in obtaining patterned graphene monolayers on top of materials that are degraded when exposed to a high-temperature or wet process. We demonstrate a low-temperature, dry process capable of transfer-printing a patterned graphene monolayer grown on Cu foil onto a target substrate using an elastomeric stamp. A challenge in realizing this is to obtain a high-quality graphene layer on a hydrophobic stamp made of poly(dimethylsiloxane), which is overcome by introducing two crucial modifications to the conventional wet-transfer method - the use of a support layer composed of Au and the decrease in surface tension of the liquid bath. Using this technique, patterns of a graphene monolayer were transfer-printed on poly(3,4-ethylenedioxythiophene): polystyrene sulfonate and MoO3, both of which are easily degraded when exposed to an aqueous or aggressive patterning process. We discuss the range of application of this technique, which is currently limited by oligomer contaminants, and possible means to expand it by eliminating the contamination problem.
引用
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页数:10
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