The floating potential approach to the characterization of capacitive effects in high-speed interconnects

被引:9
作者
Konrad, A
Graovac, M
机构
[1] Department of Electrical and Computer Engineering, University of Toronto, Toronto
关键词
D O I
10.1109/20.582464
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Capacitive coupling between high speed interconnects may cause signal degradation in high density integrated circuits (ICs) and printed circuit boards (PCBs). The usual approach to the electrical characterization of interconnects is to obtain the capacitance matrix by computing charge densities from an integral equation. The latter yields dense, non-symmetric matrices and is inadequate for complex geometries and materials. Finite element methods (FEMs) yield symmetric sparse matrices but differentiation of the solution is undesirable and the more accurate energy-based calculation of capacitances is a lengthy process. A novel approach to capacitance matrix computation based on the concept of floating potentials (FPs) is introduced. This approach obviates the need to differentiate the solution and is more economical than the energy approach.
引用
收藏
页码:1185 / 1188
页数:4
相关论文
共 10 条
[1]  
ELLIOTT RS, 1993, ELECTROMAGNETICS HIS, P189
[2]  
KALAICHELVAN S, 1995, FINITE ELEMENTS ELEC, P459
[3]   NEW FINITE-ELEMENT TECHNIQUES FOR SKIN EFFECT PROBLEMS [J].
KONRAD, A ;
CHARI, MVK ;
CSENDES, ZJ .
IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (02) :450-455
[4]   An application for line elements embedded in a 2D or 3D finite element mesh [J].
Konrad, A ;
Graovac, M .
IEEE TRANSACTIONS ON MAGNETICS, 1996, 32 (03) :647-650
[5]  
KONRAD A, 1996, P IEEE INT C SEATTL
[6]  
Kraus J., 1992, ELECTROMAGNETICS
[7]  
Silvester P., 1968, MODERN ELECTROMAGNET
[9]  
WEI C, 1984, IEEE T MICROW THEORY, V32, P439
[10]  
WEI C, 1982, TR8212 SYRAC U DEP E