Transparent Conductive ITO/Ag/ITO Electrode Deposited at Room Temperature for Organic Solar Cells

被引：22

作者：

Kim, Jun Ho ^{[1
]}

Kang, Tae-Woon ^{[2
]}

Kwon, Sung-Nam ^{[2
]}

Na, Seok-In ^{[2
]}

Yoo, Young-Zo ^{[3
]}

Im, Hyeong-Seop ^{[1
]}

Seong, Tae-Yeon ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea

[2] Chonbuk Natl Univ, Profess Grad Sch Flexible & Printable Elect, Jeonju 54896, Jeollabuk Do, South Korea

[3] Duksan Himetal Co Ltd, Ulsan 44252, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 01期

关键词：

ITO; Ag; multilayer; transparent conducting electrode; organic solar cell; LIGHT-EMITTING-DIODES; OXIDE THIN-FILMS; MULTILAYER FILMS; PHOTOVOLTAIC DEVICES; RESISTANCE; POLYMER; TRANSMITTANCE; ANODES;

D O I：

10.1007/s11664-016-4956-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the optical and electrical properties of room-temperature-deposited indium-tin-oxide (ITO)/Ag (19 nm)/ITO multilayer films as a function of ITO layer thickness. The optical and electrical properties of the ITO/Ag/ITO films were compared with those of high-temperature-deposited ITO-only films for use as an anode in organic solar cells (OSCs). The ITO/Ag/ITO multilayer films had sheet resistances in the range 5.40-5.78 X/sq, while the ITO-only film showed 14.18 Omega/sq. The carrier concentration of the ITO/Ag/ITO films gradually decreased from 2.01 x 10(22) to 7.20 x 10(21) cm(-3) as the ITO thickness increased from 17 nm to 83 nm. At 530 nm, the transmittance of the ITO/Ag/ITO (50 nm/19 nm/50 nm) films was similar to 90%, while that of the ITO-only film gave 96.5%. The multilayer film had a smooth surface with a root mean square (RMS) roughness of 0.49 nm. Poly (3-hexylthiophene) (P3HT):[6,6]phenyl-C61 butyric acid methylester (PCBM) bulk heterojunction (BHJ)-based OSCs fabricated with the ITO/Ag/ITO (50 nm/19 nm/50 nm) film showed a power conversion efficiency (PCE) (2.84%) comparable to that of OSCs with a conventional ITO-only anode (3.48%).

引用

页码：306 / 311

页数：6

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