Effects of rapid thermal annealing on electron beam evaporated SrS:Ce thin film electroluminescent devices made in H2S ambient

被引：3

作者：

Wauters, D ^{[1
]}

Poelman, D ^{[1
]}

Van Meirhaeghe, RL ^{[1
]}

Cardon, F ^{[1
]}

机构：

[1] State Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 204卷 / 1-2期

关键词：

rapid thermal annealing; electroluminescence; strontium sulphide; electron beam; zinc sulphide buffer layer; cerium mobility;

D O I：

10.1016/S0022-0248(99)00142-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Possible device structures for using rapid thermal annealing (RTA) for alternating current thin film electroluminescent (ACTFEL) devices have been evaluated. SrS : Ce ACTFEL structures have been made on a highly doped silicon substrate, which is used as supporting electrode. RTA was performed on these EL devices and the effect of different annealing temperature, annealing time and of ZnS buffer layers was investigated. Besides an increase in total brightness, a change in crystallinity and in device characteristics was seen. Time resolved optical measurements could be explained by assuming the role of interface states. Composition of the layers and diffusion phenomena have been investigated, using X-ray photo-electron spectroscopy. At annealing temperatures above 700 degrees C, the Ce ion becomes mobile. The possible physical processes behind these effects have been discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：97 / 107

页数：11

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