Influence of S/Se ratio on series resistance and on dominant recombination pathway in Cu2ZnSn(SSe)4 thin film solar cells

被引：69

作者：

Redinger, Alex ^{[1
]}

Mousel, Marina ^{[1
]}

Wolter, Max Hilaire ^{[1
]}

Valle, Nathalie ^{[2
]}

Siebentritt, Susanne ^{[1
]}

机构：

[1] Univ Luxembourg, Lab Photovolta, L-4422 Belvaux, Luxembourg

[2] Ctr Rech Publ Gabriel Lippmann, L-4422 Belvaux, Luxembourg

来源：

THIN SOLID FILMS | 2013年 / 535卷

关键词：

Cu2ZnSn(SSe)(4); CZTS; CZTSe; Thin film solar cells; Kesterite;

D O I：

10.1016/j.tsf.2012.11.111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu2ZnSn(SSe)(4) and CuZnSnSe4 thin film solar cells are analyzed via temperature dependent current-voltage analysis and quantum efficiency measurements in order to study the dominant recombination pathway and the temperature dependence of the series resistance. Here we show that in contrast to mixed S/Se devices, solar cells where the absorber consists of selenide only do not exhibit interface recombination and the series resistance is small in the complete investigated temperature range. The recombination path difference supports a band alignment model with a cliff for S and a spike for Se. The measurements are supplemented with secondary ion mass spectrometry measurements in order to gain insights into the physical origin of the different device characteristics. The results suggest that the high series resistance originates from a ZnS(e) secondary phase which is situated at the Cu2ZnSn(SSe)(4)/CdS heterojunction. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：291 / 295

页数：5

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