共 29 条
CdS and CdSe quantum dots subsectionally sensitized solar cells using a novel double-layer ZnO nanorod arrays
被引:48
作者:

Deng, Jianping
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Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China

Wang, Minqiang
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Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China

Song, Xiaohui
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Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China

Shi, Yanhua
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Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China

Zhang, Xiangyu
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Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China
机构:
[1] Xi An Jiao Tong Univ, EMRL, Key Lab, Educ Minist,Int Ctr Dielect Res, Xian 710049, Peoples R China
关键词:
Double-layer structure;
Quantum dots sensitized;
ZnO nanorods;
Solar cell;
NANOWIRE ARRAYS;
GROWTH;
FILM;
D O I:
10.1016/j.jcis.2012.08.017
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We report a novel approach for synthesizing CdS and CdSe quantum dots subsectionally sensitized double-layer ZnO nanorods for solar cells, which are comprised of CdS QDs-sensitized bottom-layer ZnO NRs and CdSe QDs-sensitized top-layer ZnO NRs. X-ray diffraction study and scanning electron microscopy analysis indicate that the solar cells of subsectionally sensitized double-layer ZnO NRs, which are the hexagonal wurtzite crystal structure, have been successfully achieved. The novel structure enlarged the range of absorbed light and enhanced the absorption intensity of light. The I-V characteristics show that the double-layer structure improved both the current density (J(sc)) and fill factor (FF) by 50%, respectively, and power conversion efficiency (eta) was increased to twice in comparison with the CdS QDs-sensitized structure. Crown Copyright (C) 2012 Published by Elsevier Inc. All rights reserved.
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收藏
页码:118 / 122
页数:5
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