THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

被引：184

作者：

Deal, William ^{[1
]}

Mei, X. B. ^{[1
]}

Leong, Kevin M. K. H. ^{[1
]}

Radisic, Vesna ^{[1
]}

Sarkozy, S. ^{[1
]}

Lai, Richard ^{[1
]}

机构：

[1] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2011年 / 1卷 / 01期

关键词：

Active semiconductor circuit; solid-state sensor; solid-state source; three-terminal device; AMPLIFIER;

D O I：

10.1109/TTHZ.2011.2159539

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit results at 670 GHz are described. The paper concludes with initial results from a 670-GHz InP HEMT receiver and trends for InP HEMT components.

引用

页码：25 / 32

页数：8

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