Optical Properties of Undoped a-Plane GaN Grown with Different Initial Growth Pressures

被引：3

作者：

Song, Keun Man ^{[1
]}

Kim, Hogyoung ^{[2
]}

机构：

[1] Korea Adv Nano Fab Ctr, Suwon 443770, Gyeonggi, South Korea

[2] Hanbat Natl Univ, Coll Humanities & Sci, Taejon 305719, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期

关键词：

CHEMICAL-VAPOR-DEPOSITION; NITRIDE SEMICONDUCTORS; STACKING-FAULTS; PHASE EPITAXY; SAPPHIRE; LUMINESCENCE; PHOTOLUMINESCENCE; DEFECTS; DEPENDENCE; MOVPE;

D O I：

10.1143/JJAP.51.092101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of undoped a-plane GaN films grown by metal organic vapor phase epitaxy (MOVPE) with different initial growth pressures were investigated using photoluminescence (PL) measurements. Compared to GaN sample grown with higher initial grown pressure, which exhibited the dominant emission band at 3.423 eV, the dominant PL spectra for GaN sample grown with lower initial growth pressure was the donor-acceptor pair (DAP) band at 3.268 eV. Interestingly, the PL intensity of DAP longitudinal optical (LO) phonon replica was stronger than DAP emission above 50 K, indicating strong phonon coupling. The emission band at 3.359 eV observed for the sample grown with higher initial growth pressure was not observed for the sample grown with lower initial growth pressure. Based on the results obtained from Si doping, it was suggested that this band might be related with the improved crystalline quality through Si doping. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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