Built-in ESD Protection for RFID Tag ICs

被引:1
作者
Ding Yi [1 ]
Hu Jianguo [1 ]
Duan Zhikui [1 ]
Wang Deming [1 ]
Ding Yanyu [1 ]
Tan Hongzhou [1 ]
机构
[1] Sun Yat Sen Univ, Sch Informat Sci & Technol, Guangzhou 510006, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
ESD protection; Built-in; RFID tag; DESIGN; SYSTEM; UHF; NA;
D O I
10.1049/cje.2016.06.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The built-in Electro-Static discharge (ESD) protection circuits for Radio frequency identification (RFID) tag ICs are proposed. The ESD protection function is built into the rectifier and amplitude limiter. The rectifier and limiter are connected directly to the RF interface, and some transistors can discharge the larger current. These transistors can be used to build ESD protection circuits, through the redesign and optimization. The built-in ESD protection circuits can improve the ESD protection level and reduce the layout area. The circuits have been fabricated in 0.18 mu m CMOS process. The test results show that the built-in ESD protection circuits work well under 4kV ESD pressure and save as much as 72% of the layout area compare with foundry standard ESD protection cells.
引用
收藏
页码:1058 / 1062
页数:5
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