Development of an EUV reflectometer using a single line emission from a laser plasma X-ray source

被引:4
|
作者
Kandaka, N [1 ]
Kondo, H [1 ]
Sugisaki, K [1 ]
Oshino, T [1 ]
Shiraishi, M [1 ]
Ishiyama, W [1 ]
Murakami, K [1 ]
机构
[1] Nikon Inc, Tokyo 1408601, Japan
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES V | 2001年 / 4343卷
关键词
EUV; reflectometer; laser-plasma source; multilayer mirror;
D O I
10.1117/12.436714
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have successfully developed a simple, laboratory-sized EUV reflectometer "EUMOR" (Extreme Ultraviolet Monochromatic Reflectometer). A CO2 gas-jet-target laser-plasma source was employed as the EUV source for EUMOR. EUMOR uses a single line emission at the wavelength of 12.98 nm from a CO2 gas-jet-target laser-plasma source without a grating, therefore it can achieve simultaneous high spectral resolution and high throughput. The intensity of EUV emission from the CO2 gas-jet-target laser-plasma was quantitatively evaluated,, and the EUV flux that irradiated the surface of a sample was estimated to be 5x10(5) photons/shot. Four Mo/Si multilayer mirrors which were deposited under the same conditions with different layer periods were measured by EUMOR. The parameters of these multilayer mirrors, which were obtained by parameter fitting to the measured angular distribution of the reflectivity, showed good agreement with each other, demonstrating, the reliability of EUMOR data.
引用
收藏
页码:599 / 606
页数:8
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