Modification of Silicon Carbide Surfaces by Atmospheric Pressure Plasma for Composite Applications

被引:9
|
作者
Rodriguez-Santiago, Victor [1 ]
Vargas-Gonzalez, Lionel [1 ]
Bujanda, Andres A. [1 ]
Baeza, Jose A. [1 ]
Fleischman, Michelle S. [1 ]
Yim, Jacqueline H. [1 ]
Pappas, Daphne D. [1 ]
机构
[1] USA, Res Lab, Aberdeen Proving Ground, MD 21005 USA
关键词
silicon carbide; dielectric barrier discharges; bonding; surface modification; grit blasting; POLYMERS; ALUMINA; EPOXY;
D O I
10.1021/am303227q
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we explore the use of atmospheric pressure plasmas for enhancing the adhesion of SiC surfaces using a urethane adhesive, as an alternative to grit blasting Surface analysis showed that He-O-2 plasma treatments resulted in a hydrophilic Surface mostly by producing SiOx. Four point bending tests and bonding pull tests were carried out on control, grit-blasted, and plasma-treated surfaces. Grit-blasted samples showed enhanced bonding but also a decrease in flexural strength. Plasma treated samples did not affect the flexural strength of the material and showed an increase in bonding strength. These results suggest that atmospheric pressure plasma treatment of ceramic materials, is an effective alternative to grit blasting for adhesion enhancement.
引用
收藏
页码:4725 / 4730
页数:6
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