Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

被引：33
作者：
Du, Lulu [1 ,2 ]
Li, He [1 ,2 ]
Yan, Linlong [1 ,2 ]
Zhang, Jiawei [3 ]
Xin, Qian [1 ,2 ]
Wang, Qingpu [1 ,2 ]
Song, Aimin [3 ]
机构：
[1] Shandong Univ, Ctr Nanoelect, Jinan 250100, Peoples R China
[2] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China
[3] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
来源：
APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 01期
基金：
英国工程与自然科学研究理事会; 中国博士后科学基金; 中国国家自然科学基金;
关键词：
ELECTRICAL-PROPERTIES; TRANSPORT;
D O I：
10.1063/1.4973693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 x 10(7), a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface. Published by AIP Publishing.
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页数：4
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