Polarization-dependent Rabi oscillations in single InGaAs quantum dots

被引:6
作者
Besombes, L [1 ]
Baumberg, JJ
Motohisa, J
机构
[1] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England
[2] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
关键词
D O I
10.1088/0268-1242/19/4/052
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
引用
收藏
页码:S148 / S151
页数:4
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