On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon

被引：2

作者：

Sharma, K. ^{[1
]}

Ponomarev, M. V. ^{[2
]}

van de Sanden, M. C. M. ^{[1
,2
]}

Creatore, M. ^{[1
,3
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] DIFFER, NL-3430 BE Nieuwegein, Netherlands

[3] Solliance, NL-5656 AE Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 21期

关键词：

MEDIUM-RANGE ORDER; A-SI-H; EXPANDING THERMAL PLASMA; POLYCRYSTALLINE SILICON; FILM GROWTH; DEPOSITION; GLASS; PARAMETERS; NETWORK; VOIDS;

D O I：

10.1063/1.4809517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this contribution, we analyze the thickness effect of the underlying aluminum doped-zinc oxide (ZnO:Al) layers on the structural properties and crystallization kinetics of hydrogenated amorphous silicon (a-Si:H) thin films. It is shown that the disorder in as-deposited a-Si:H films, as probed by Raman spectroscopy, decreased with increasing ZnO:Al roughness. This caused an earlier nucleation upon crystallization when compared to a-Si:H layers directly grown on SiNx-coated glass. (C) 2013 AIP Publishing LLC.

引用

页数：3

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