Design of unipolar intersubband lasers for terahertz emission

被引:4
作者
Sun, G [1 ]
机构
[1] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
关键词
quantum cascade laser; terahertz emission; optical phonon scattering; gallium nitride; silicon; germanium;
D O I
10.1016/j.jlumin.2006.01.060
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Design results are presented for quantum cascade lasers (QCLs) of either GaN-based or Si-based system. The n-i-n GaN/AlGaN QCL offers the advantage of room temperature operation, while the p-i-p SiGe/Si QCLs offer the potential for monolithic integration of Si photonics with Si electronics. Population dynamics analysis shows that both systems are capable of reaching sufficient optical gain for lasing at wavelengths in the tetrahertz range. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:528 / 534
页数:7
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