Electron-beam deposited SiO2 investigated by scanning capacitance microscopy

被引：10

作者：

Brezna, W ^{[1
]}

Fischer, M ^{[1
]}

Wanzenboeck, HD ^{[1
]}

Bertagnolli, E ^{[1
]}

Smoliner, J ^{[1
]}

机构：

[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1063/1.2189030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quality of electron-beam deposited, few nanometers thick, SiO2 layers on silicon substrates was investigated by scanning capacitance microscopy and spectroscopy. Rapid thermal annealing had to be applied prior to the capacitance versus voltage [C(V)] measurements to obtain typical metal-oxide-semiconductor behavior, and it was found that the total oxide charge is negative on the deposited oxide layers. Higher annealing temperatures resulted in an overall reduction of the number of oxide charges. This opens up the possibility to use electron-beam deposited SiO2 as a dielectric material in metal-oxide-semiconductor prototyping applications.

引用

页数：3

共 13 条

[1] Mapping of local oxide properties by quantitative scanning capacitance spectroscopy [J].

Brezna, W ;

Harasek, S ;

Lugstein, A ;

Leitner, T ;

Hoffmann, H ;

Bertagnolli, E ;

Smoliner, J .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[2] Quantitative scanning capacitance spectroscopy [J].

Brezna, W ;

Schramboeck, M ;

Lugstein, A ;

Harasek, S ;

Enichlmair, H ;

Bertagnolli, E ;

Gornik, E ;

Smoliner, J .

APPLIED PHYSICS LETTERS, 2003, 83 (20) :4253-4255

[3] Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy [J].

De Wolf, P ;

Stephenson, R ;

Trenkler, T ;

Clarysse, T ;

Hantschel, T ;

Vandevorst, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :361-368

[4] Novel high resolution scanning thermal probe [J].

Edinger, K ;

Gotszalk, T ;

Rangelow, IW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2856-2860

[5] Rapid prototyping of site-specific nanocontacts by electron and ion beam assisted direct-write nanolithography [J].

Gopal, V ;

Radmilovic, VR ;

Daraio, C ;

Jin, S ;

Yang, PD ;

Stach, EA .

NANO LETTERS, 2004, 4 (11) :2059-2063

[6] Focused ion beam prepared contacts of tungsten to silicon characterized by a cross-bridge Kelvin resistor approach [J].

Langfischer, H ;

Bertagnolli, E .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5827-5829

[7] Damage-free mask repair using electron beam induced chemical reactions [J].

Liang, T ;

Stivers, A .

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 :375-384

[8] Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition [J].

Lipp, S ;

Frey, L ;

Lehrer, C ;

Frank, B ;

Demm, E ;

Pauthner, S ;

Ryssel, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3920-3923

[9]

Nicollian E. H., 1982, MOS METAL OXIDE SEMI

[10] Rapid prototyping of two-dimensional photonic crystal devices by a dual beam focused ion beam system [J].

Stomeo, T ;

Visimberga, G ;

Todaro, MT ;

Passaseo, A ;

Cingolani, R ;

De Vittorio, M ;

Cabrini, S ;

Carpentiero, A ;

Di Fabrizio, E .

MICROELECTRONIC ENGINEERING, 2005, 78-79 :417-421

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