Operational design on high-speed semiconductor optical amplifier with assist light for application to wavelength converters using cross-phase modulation
被引:38
作者:
Matsumoto, A
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机构:
ROHM CO Ltd, Kyoto 6158585, JapanROHM CO Ltd, Kyoto 6158585, Japan
Matsumoto, A
[1
]
Nishimura, K
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机构:ROHM CO Ltd, Kyoto 6158585, Japan
Nishimura, K
Utaka, K
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机构:ROHM CO Ltd, Kyoto 6158585, Japan
Utaka, K
Usami, M
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机构:ROHM CO Ltd, Kyoto 6158585, Japan
Usami, M
机构:
[1] ROHM CO Ltd, Kyoto 6158585, Japan
[2] Waseda Univ, Dept Elect Engn & Biosci, Tokyo 1698555, Japan
semiconductor optical amplifier (SOA);
nonlinearity;
cross phase modulation (XPM);
cross gain modulation (XGM);
gain recovery;
transfer matrix method (TMM) analysis;
wavelength converter;
D O I:
10.1109/JQE.2006.869809
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Using the newly developed time-dependent transfer matrix method with nonlinear effects, we analyzed the characteristics of cross-phase modulation (XPM), cross-gain modulation and gain recovery time of a semiconductor optical amplifier (SOA) with an assist light injection, which is introduced to speed up the gain recovery of the SOA. Particularly for the application to high-speed wavelength converters using XPM with an interferometer structure where pi-phase change is required, various parameters such as SOA lengths, wavelengths and powers of injected lights, and their propagation directions are designed via numerical simulation. Discussions concerning the conditions of an SOA structure and the parameters of injected lights for high-speed operation are described to show the potential of fast gain recovery with a response time as low as 25 ps.