Effects of Substrate Miscut on the Quality of In0.3Ga0.7As Layers Grown on Metamorphic (Al)GaInP Buffers by Metal-Organic Chemical Vapor Deposition

被引：3

作者：

Li, Kuilong ^{[1
,2
]}

Sun, Yurun ^{[1
,2
]}

Dong, Jianrong ^{[1
]}

Zhao, Yongming ^{[1
]}

Yu, Shuzhen ^{[1
]}

Zhao, Chunyu ^{[1
]}

Zeng, Xulu ^{[1
,2
]}

Yang, Hui ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 06期

关键词：

DISLOCATIONS; FILMS;

D O I：

10.7567/APEX.6.065502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.3Ga0.7As layers were grown by metal-organic chemical vapor deposition utilizing compositionally step-graded (Al)GaInP buffers on different misorientated GaAs substrates. The substrate miscut toward the [110] direction promotes alpha dislocation glide along the [110] direction while it exerts an adverse effect on beta dislocations in the perpendicular direction with increasing the miscut degree. In comparison with the 2 degrees and 7 degrees samples, a better surface morphology with a RMS roughness of 5.77 nm and a lower density of threading dislocations indicated by the photoluminescence and transmission electron microscopy results were obtained in the 15 degrees sample. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 14 条

[1] Modeling cross-hatch surface morphology in growing mismatched layers
Andrews, AM
Speck, JS
Romanov, AE
Bobeth, M
Pompe, W
[J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 1933 - 1943
[2] THE MEASUREMENT OF THREADING DISLOCATION DENSITIES IN SEMICONDUCTOR CRYSTALS BY X-RAY-DIFFRACTION
AYERS, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 71 - 77
[3] Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si (x∼0.4-0.5) films caused by Si substrate misorientation from (001)
Bolkhovityanov, Yu. B.
Deryabin, A. S.
Gutakovskii, A. K.
Sokolov, L. V.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (13)
[4] Reduction of crosshatch roughness and threading dislocation density in metamorphic GaInP buffers and GaInAs solar cells
France, R. M.
Geisz, J. F.
Steiner, M. A.
To, B.
Romero, M. J.
Olavarria, W. J.
King, R. R.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)
[5] Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers
Goldman, RS
Kavanagh, KL
Wieder, HH
Ehrlich, SN
Feenstra, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5137 - 5149
[6] Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight
Guter, Wolfgang
Schoene, Jan
Philipps, Simon P.
Steiner, Marc
Siefer, Gerald
Wekkeli, Alexander
Welser, Elke
Oliva, Eduard
Bett, Andreas W.
Dimroth, Frank
[J]. APPLIED PHYSICS LETTERS, 2009, 94 (22)
[7] High-Quality 1 eV In0.3Ga0.7As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
Hong Quan Nguyen
Chang, Edward Yi
Yu, Hung Wei
Lin, Kung Liang
Chung, Chen Chen
[J]. APPLIED PHYSICS EXPRESS, 2011, 4 (07)
[8] MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS
HULL, R
BEAN, JC
[J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1992, 17 (06) : 507 - 546
[9] Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%
Leite, Marina S.
Woo, Robyn L.
Munday, Jeremy N.
Hong, William D.
Mesropian, Shoghig
Law, Daniel C.
Atwater, Harry A.
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (03)
[10] NUCLEATION OF DISLOCATIONS IN SIGE LAYERS GROWN ON (001)SI
MOONEY, PM
LEGOUES, FK
TERSOFF, J
CHU, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) : 3968 - 3977

← 1 2 →