Properties of vanadium oxide films prepared by DC reactive magnetron sputtering at different oxygen partial pressures

被引：2

作者：

Huang, Rengui ^{[1
]}

Zhang, Dongping ^{[1
]}

Zhang, Ting ^{[1
]}

Li, Yan ^{[1
]}

Chen, Youtong ^{[1
]}

Zhong, Yonglin ^{[1
]}

Fan, Ping ^{[1
]}

机构：

[1] Shenzhen Univ, Inst Thin Films Phys & Applicat, Shenzhen 518060, Peoples R China

来源：

MATERIALS PROCESSING TECHNOLOGY II, PTS 1-4 | 2012年 / 538-541卷

关键词：

vanadium oxide film; DC reactive magnetron sputtering; oxygen flow rate; annealing; TRANSITION; OXIDATION;

D O I：

10.4028/www.scientific.net/AMR.538-541.105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Due to their unique physical and chemical properties, vanadium oxide thin films have become a hot research topic. In the present work, Vanadium oxide thin films were prepared by DC reactive magnetron sputtering at different oxygen partial pressure and thermally annealed in Ar atmosphere at 500 degrees C for 2 hours. The microstructure, transmittance, optical band gap, resistivity, and temperature coefficient resistance (TCR) were measured. The results suggest that increasing of oxygen partial pressure can obviously improve the optical and electric properties.

引用

页码：105 / 109

页数：5

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