Silicon ion implanted PMMA for soft electronics

被引：33
作者：
Hadjichristov, G. B. [1 ]
Gueorguiev, V. K. [1 ]
Ivanov, Tz. E. [1 ]
Marinov, Y. G. [1 ]
Ivanov, V. G. [2 ]
Faulques, E. [3 ]
机构：
[1] Bulgarian Acad Sci, Georgi Nadjokov Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[3] Nantes Atlantic Univ, CNRS, Inst Mat Jean Rouxel, UMR6502, F-44322 Nantes, France
来源：
ORGANIC ELECTRONICS | 2008年 / 9卷 / 06期
基金：
瑞士国家科学基金会;
关键词：
Ion implanted polymers; Electrical properties; Electrical conductivity; Organic field-effect devices; Polymethylmethacrylate (PMMA);
D O I：
10.1016/j.orgel.2008.08.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical conductivity and field-effect transconductance of polymethylmethacrylate (PMMA) subjected to implantation with 50 keV silicon ions at doses in the range from 10(14) to 10(17) ions/cm(2) were examined. The electrical response of Si+-implanted PMMA was studied by direct current (DC) and alternating current (AC) measurements and was related to the structure formed in the host polymer. In addition to the sizable enhancement of the conductivity with the implantation dose, the field-effect transconductance found in Si+-implanted PMMA shows the potential of this material for soft-electronic applications. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1051 / 1060
页数：10
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