Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

被引：10
作者：
Kajii, Hirotake [1 ]
Terashima, Daiki [1 ]
Kusumoto, Yusuke [1 ]
Ikezoe, Ikuya [1 ]
Ohmori, Yutaka [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
关键词：
POLYFLUORENE THIN-FILMS; FIELD-EFFECT TRANSISTOR; AMBIPOLAR; CIRCUITS; DIODES; EMISSION; STRESS;
D O I：
10.7567/JJAP.52.04CK01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission. (C) 2013 The Japan Society of Applied Physics
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页数：4
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