Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD

被引：7

作者：

Sozykin, A. S. ^{[1
]}

Strelchenko, S. S. ^{[1
]}

Prokolkin, E. V. ^{[1
]}

Ladugin, M. A. ^{[2
]}

机构：

[1] Bauman Moscow Tech Univ, Kaluga Branch, Kaluga 248000, Russia

[2] Sigm Plus Co, Moscow 117342, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 363卷

关键词：

Segregation; Metalorganic chemical vapor deposition; Quantum wells; Semiconducting indium compound; QUANTUM-WELLS; SURFACE SEGREGATION; EPITAXY;

D O I：

10.1016/j.jcrysgro.2012.10.057

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper a thermodynamic-kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C2H5)(3) - In(CH3)(3) - AsH3 system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：253 / 257

页数：5

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