Nanopattern profile control technology using reactive ion etching for 100 GB optical disc mastering

被引：2

作者：

Fujimura, M ^{[1
]}

Hosoda, Y ^{[1
]}

Katsumura, M ^{[1
]}

Kobayashi, M ^{[1
]}

Kitahara, H ^{[1
]}

Hashimoto, K ^{[1
]}

Kasono, O ^{[1
]}

Iida, T ^{[1
]}

Kuriyama, K ^{[1
]}

Yokogawa, F ^{[1
]}

机构：

[1] Pioneer Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 3502288, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 2B期

关键词：

optical disc; next-generation optical disc; mastering; electron beam recorder; reactive ion etching; etching power; pattern inclination angle; line edge roughness;

D O I：

10.1143/JJAP.45.1414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We had developed an electron beam recorder (EBR) and studied a process technology for high-density optical disc mastering. In this study, we aimed at controlling a nanopattern profile by adopting inductively coupled plasma reactive ion etching (ICP-RIE) under simple conditions. To control a pattern inclination angle, we introduced an etching power ratio of antenna to bias and investigated the relationship. From the results of our investigation, we confirmed that inclination angle depended on etching power ratio linearly. Furthermore, in the case of a 100 GB read-only memory (ROM) equivalent pattern, we formed two kinds of inclined pattern by adopting ICP-RIE. We evaluated line edge roughness (LER) to determine the difference in pit profile accurately. As the result, we confirmed that LER was improved at a steep inclination angle. In addition, we applied ICP-RIE to a 300 GB ROM pattern.

引用

页码：1414 / 1418

页数：5

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