Carbon diffusion and reactivity in Mn5Ge3 thin films

被引：3

作者：

Petit, Matthieu ^{[1
,2
]}

Dau, Minh Tuan ^{[1
,2
]}

Monier, Guillaume ^{[3
,4
]}

Michez, Lisa ^{[1
,2
]}

Barre, Xavier ^{[1
,2
]}

Spiesser, Aurelie ^{[1
,2
]}

Le Thanh, Vinh ^{[1
,2
]}

Glachant, Alain ^{[1
,2
]}

Coudreau, Cyril ^{[1
,2
]}

Bideux, Luc ^{[3
,4
]}

Robert-Goumet, Christine ^{[3
,4
]}

机构：

[1] CINaM CNRS UPR3118, Campus Luminy Case 913, F-13288 Marseille 9, France

[2] Univ Aix Marseille 1, F-13288 Marseille, France

[3] Univ Clermont Ferrand 2, uniblapas, F-63000 Clermont Ferrand, France

[4] LASMEA, CNRS, UMR 6602, F-63177 Clermont Ferrand, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 | 2012年 / 9卷 / 06期

关键词：

Mn5Ge3; carbon; diffusion; interstitial; XPS; AES; FERROMAGNETIC MN5GE3; TEMPERATURE; GE(111);

D O I：

10.1002/pssc.201100448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Curie temperature of Mn5Ge3 has been successfully enhanced by carbon doping. In this context the diffusion of a carbon thin film in Mn5Ge3 has been studied at room temperature. A value of the diffusivity of about D = 2.4x10(-23) +/- 0.5x10(-23) m(2) s(-1) is reported. This value is in the typical range of interstitial diffusion coefficients. Moreover Auger Ge and Mn peaks shifts and Ge-3d core level have been investigated to get some details on the reactivity of carbon atoms in Mn5Ge3. Mn Auger transitions display a shift of 4 eV whereas Ge transitions do not. Similarly Ge-3d core level does not contain C related contribution but presents a Mn one. These observations confirmed the fact that carbon atoms are not inert species for Mn. It suggests that a ternary GeMn-C alloy could occur and should be taken into account when doping the Mn5Ge3 with carbon.

引用

页码：1374 / 1377

页数：4

共 19 条

[1] Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements
Coffa, S
Libertino, S
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (23) : 3369 - 3371
[2] Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) hetero structures
Dau, M. -T.
Spiesser, A.
LeGiang, T.
Michez, L. A.
Olive-Mendez, S. F.
Le Thanh, V.
Petit, M.
Raimundo, J. -M.
Glachant, A.
Derrien, J.
[J]. THIN SOLID FILMS, 2010, 518 : S266 - S269
[3] Dau M.-T., 2011, APPL PHYS L IN PRESS
[4] Strongly enhanced Curie temperature in carbon-doped Mn5Ge3 films
Gajdzik, M
Sürgers, C
Kelemen, MT
Von Löhneysen, H
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 221 (03) : 248 - 254
[5] ESCA STUDY OF MOLECULAR GES3-XTEXAS2 GLASSES
HOLLINGER, G
KUMURDJIAN, P
MACKOWSKI, JM
PERTOSA, P
PORTE, L
DUC, TM
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) : 237 - 245
[6] QUANTITATIVE-ANALYSIS BY XPS USING THE MULTILINE APPROACH
JABLONSKI, A
LESIAK, B
ZOMMER, L
EBEL, MF
EBEL, H
FUKUDA, Y
SUZUKI, Y
TOUGAARD, S
[J]. SURFACE AND INTERFACE ANALYSIS, 1994, 21 (10) : 724 - 730
[7] Mehrer H., 2007, DIFFUSION SOLIDS, P219
[8] Mehrer H., 2007, DIFFUSION SOLIDS, P413
[9] Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection
Olive-Mendez, S.
Spiesser, A.
Michez, L. A.
Le Thanh, V.
Glachant, A.
Derrien, J.
Devillers, T.
Barski, A.
Jamet, M.
[J]. THIN SOLID FILMS, 2008, 517 (01) : 191 - 196
[10] Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers
Panguluri, RP
Zeng, CG
Weitering, HH
Sullivan, JM
Erwin, SC
Nadgorny, B
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (08): : R67 - R69

← 1 2 →