Carbon diffusion and reactivity in Mn5Ge3 thin films

被引:3
作者
Petit, Matthieu [1 ,2 ]
Dau, Minh Tuan [1 ,2 ]
Monier, Guillaume [3 ,4 ]
Michez, Lisa [1 ,2 ]
Barre, Xavier [1 ,2 ]
Spiesser, Aurelie [1 ,2 ]
Le Thanh, Vinh [1 ,2 ]
Glachant, Alain [1 ,2 ]
Coudreau, Cyril [1 ,2 ]
Bideux, Luc [3 ,4 ]
Robert-Goumet, Christine [3 ,4 ]
机构
[1] CINaM CNRS UPR3118, Campus Luminy Case 913, F-13288 Marseille 9, France
[2] Univ Aix Marseille 1, F-13288 Marseille, France
[3] Univ Clermont Ferrand 2, uniblapas, F-63000 Clermont Ferrand, France
[4] LASMEA, CNRS, UMR 6602, F-63177 Clermont Ferrand, France
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6 | 2012年 / 9卷 / 06期
关键词
Mn5Ge3; carbon; diffusion; interstitial; XPS; AES; FERROMAGNETIC MN5GE3; TEMPERATURE; GE(111);
D O I
10.1002/pssc.201100448
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Curie temperature of Mn5Ge3 has been successfully enhanced by carbon doping. In this context the diffusion of a carbon thin film in Mn5Ge3 has been studied at room temperature. A value of the diffusivity of about D = 2.4x10(-23) +/- 0.5x10(-23) m(2) s(-1) is reported. This value is in the typical range of interstitial diffusion coefficients. Moreover Auger Ge and Mn peaks shifts and Ge-3d core level have been investigated to get some details on the reactivity of carbon atoms in Mn5Ge3. Mn Auger transitions display a shift of 4 eV whereas Ge transitions do not. Similarly Ge-3d core level does not contain C related contribution but presents a Mn one. These observations confirmed the fact that carbon atoms are not inert species for Mn. It suggests that a ternary GeMn-C alloy could occur and should be taken into account when doping the Mn5Ge3 with carbon.
引用
收藏
页码:1374 / 1377
页数:4
相关论文
共 19 条
[1]   Room-temperature diffusivity of self-interstitials and vacancies in ion-implanted Si probed by in situ measurements [J].
Coffa, S ;
Libertino, S .
APPLIED PHYSICS LETTERS, 1998, 73 (23) :3369-3371
[2]   Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) hetero structures [J].
Dau, M. -T. ;
Spiesser, A. ;
LeGiang, T. ;
Michez, L. A. ;
Olive-Mendez, S. F. ;
Le Thanh, V. ;
Petit, M. ;
Raimundo, J. -M. ;
Glachant, A. ;
Derrien, J. .
THIN SOLID FILMS, 2010, 518 :S266-S269
[3]  
Dau M.-T., 2011, APPL PHYS L IN PRESS
[4]   Strongly enhanced Curie temperature in carbon-doped Mn5Ge3 films [J].
Gajdzik, M ;
Sürgers, C ;
Kelemen, MT ;
Von Löhneysen, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 221 (03) :248-254
[5]   ESCA STUDY OF MOLECULAR GES3-XTEXAS2 GLASSES [J].
HOLLINGER, G ;
KUMURDJIAN, P ;
MACKOWSKI, JM ;
PERTOSA, P ;
PORTE, L ;
DUC, TM .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :237-245
[6]   QUANTITATIVE-ANALYSIS BY XPS USING THE MULTILINE APPROACH [J].
JABLONSKI, A ;
LESIAK, B ;
ZOMMER, L ;
EBEL, MF ;
EBEL, H ;
FUKUDA, Y ;
SUZUKI, Y ;
TOUGAARD, S .
SURFACE AND INTERFACE ANALYSIS, 1994, 21 (10) :724-730
[7]  
Mehrer H., 2007, DIFFUSION SOLIDS, P219
[8]  
Mehrer H., 2007, DIFFUSION SOLIDS, P413
[9]   Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection [J].
Olive-Mendez, S. ;
Spiesser, A. ;
Michez, L. A. ;
Le Thanh, V. ;
Glachant, A. ;
Derrien, J. ;
Devillers, T. ;
Barski, A. ;
Jamet, M. .
THIN SOLID FILMS, 2008, 517 (01) :191-196
[10]   Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers [J].
Panguluri, RP ;
Zeng, CG ;
Weitering, HH ;
Sullivan, JM ;
Erwin, SC ;
Nadgorny, B .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (08) :R67-R69