Conduction Band Model of [110]/(001) Uniaxially Strained Si

被引：8

作者：

Song Jian-Jun ^{[1
]}

Yang Chao ^{[1
]}

Wang Guan-Yu ^{[1
]}

Zhou Chun-Yu ^{[1
]}

Wang Bing ^{[1
]}

Hu Hui-Yong ^{[1
]}

Zhang He-Ming ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

VALENCE-BAND; SILICON; PHYSICS;

D O I：

10.1143/JJAP.51.104301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction band structure of [110]/(001) uniaxially strained Si changes owing to the coupling effect between Delta(1) and Delta(2') conduction subbands. Consequently, its corresponding physical property will be changed. Because of the lack of reported papers about this change, we establish the analytic E-k relationship, considering the coupling effects between conduction subbands, near the extreme point of the energy valley in [110]/(001) uniaxially strained Si within the framework of the k - p perturbation theory. Then, the parameters of the conduction band of [110]/(001) uniaxially strained Si, including band degeneracy, energy level, splitting energy, and effective mass, as a function of the magnitude of stress were obtained. Our analytic models and quantized results will provide significant theoretical references for the design of a uniaxially strained Si metal oxide semiconductor field effect transistor (MOSFET). (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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