Optical properties of SiOx nanostructured films by pulsed-laser deposition

被引：0

作者：

Chen, XY ^{[1
]}

Lu, YF ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3 | 2005年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

SiOx nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6-2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory. @ 2005 Optical Society of America.

引用

页码：1745 / 1747

页数：3