Growth of diamond-like carbon thin film using microwave chemical vapor deposition

被引：1

作者：

Ooi, H. T. ^{[1
]}

Ibrahim, K. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town, Malaysia

来源：

FUNCTIONAL MATERIALS AND DEVICES | 2006年 / 517卷

关键词：

diamond-like carbon; synthetic diamond; chemical vapor deposition;

D O I：

10.4028/www.scientific.net/MSF.517.57

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents an analysis of diamond-like carbon thin film deposited using homebuilt microwave chemical vapor deposition. Two different deposition conditions were investigated, namely, with and without microwave power. Post deposition analysis included Raman spectroscopy, scanning electron microscope (SEM), energy dispersed X-ray (EDX), four-point-probe resistivity measurements and refractive spectroscopy. Substrate with pretreatment was observed to have thin film formation. Samples with diamond paste pretreatment show better quality compared to SiC treated samples. as suggested by Raman spectral. The presences of sp(3) and sp(2) peaks were identified in the Raman spectral. The overall resistivity is low due to the graphite content.

引用

页码：57 / 60

页数：4

共 12 条

[1] Optimising diamond nucleation via combined pre-treatments [J].