Structural and electrical properties of zirconium doped yttrium oxide nanostructures

被引:7
作者
Bahari, Ali [1 ]
Ebrahimzadeh, Masoud [1 ]
Gholipur, Reza [1 ]
机构
[1] Univ Mazandaran, Dept Solid State Phys, Babol Sar 4741695447, Iran
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2014年 / 28卷 / 16期
关键词
VSSI; high-k dielectric; ZrxY1-xOy; sol-gel method; THIN-FILMS; OPTICAL-PROPERTIES;
D O I
10.1142/S0217979214501021
中图分类号
O59 [应用物理学];
学科分类号
摘要
A synthetic process for the formation of ZrxY1-xOy nanostructures is demonstrated by the reaction of yttrium nitrate hexahydrate with zirconium propoxide. The reactions are carried out at temperature 60 degrees C and pressure 0.1 MPa. The energy dispersive X-ray (EDX) spectroscopy measurements confirm formation of ZrxY1-xOy nanostructures and the presence of carbonate and hydroxide species which are removed after high temperature anneals. It was found that the oxygen pressure during synthesis plays a determinant role on the structural properties of the nanostructure. This effect is further studied by atomic force microscopy (AFM) measurements and scanning electron microscope (SEM), which showed the formation of an isotopically organized structure. X-ray diffraction (XRD) measurement reveals that these changes in the nanostructural efficiency are associated with structural and compositional changes among the substrate. The dielectric constant as measured by the capacitance-voltage (C-V) technique is estimated to be around 39.05. C-V measurements taken at 1 MHz show the maximum capacitance for the Zr0.05Y0.95Oy film. The leakage current densities were below 10(-5) A/cm(2) for the Zr0.05Y0.95Oy film.
引用
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页数:11
相关论文
共 19 条
[1]   Nitrogen plasma annealing for low temperature Ta2O5 films [J].
Alers, GB ;
Fleming, RM ;
Wong, YH ;
Dennis, B ;
Pinczuk, A ;
Redinbo, G ;
Urdahl, R ;
Ong, E ;
Hasan, Z .
APPLIED PHYSICS LETTERS, 1998, 72 (11) :1308-1310
[2]   OPTICAL-PROPERTIES OF TIO2, Y2O3 AND CEO2 THIN-FILMS DEPOSITED BY ELECTRON-BEAM EVAPORATION [J].
ATANASSOV, G ;
THIELSCH, R ;
POPOV, D .
THIN SOLID FILMS, 1993, 223 (02) :288-292
[3]   Ultra thin silicon nitride films on Si(100) studied with core level photoemission [J].
Bahari, A. ;
Morgen, P. ;
Li, Z. S. .
SURFACE SCIENCE, 2008, 602 (13) :2315-2324
[4]   Growth of a stacked silicon nitride/silicon oxide dielectric on Si (100) [J].
Bahari, A. ;
Morgen, P. ;
Pedersen, K. ;
Li, Z. S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04) :2119-2123
[5]   Growth of ultrathin silicon nitride on Si(111) at low temperatures [J].
Bahari, A ;
Robenhagen, U ;
Morgen, P ;
Li, ZS .
PHYSICAL REVIEW B, 2005, 72 (20)
[6]   Valence band studies of the formation of ultrathin pure silicon nitride films on Si(100) [J].
Bahari, A. ;
Morgen, P. ;
Li, Z. S. .
SURFACE SCIENCE, 2006, 600 (15) :2966-2971
[7]   THE INVESTIGATION ON STABILITY AND STRUCTURAL PROPERTIES OF COHESION-BASED NANOSTRUCTURES MATERIAL [J].
Bahari, Ali ;
Gholipur, Reza ;
Derakhshi, Maryam .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2013, 27 (27)
[8]   INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL-HIGH-k OXIDE-SILICON-TYPE NONVOLATILE MEMORY DEVICES [J].
Bahari, Ali ;
Gholipur, Reza .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2012, 26 (31)
[9]   Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs [J].
Bonfiglio, Valentina ;
Iannaccone, Giuseppe .
SOLID-STATE ELECTRONICS, 2013, 84 :127-131
[10]   EXPERIMENTAL AND THEORETICAL DETERMINATION OF THE ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF 3 PHASES OF ZRO2 [J].
FRENCH, RH ;
GLASS, SJ ;
OHUCHI, FS ;
XU, YN ;
CHING, WY .
PHYSICAL REVIEW B, 1994, 49 (08) :5133-5141